Home > News > Research Progress Has Been Made On The New Synthesis Mechanism Of Hexagonal Boron Nitride

Research Progress Has Been Made On The New Synthesis Mechanism Of Hexagonal Boron Nitride

wallpapers News 2020-11-16
Recently, the research team of Wu Tianru, an associate researcher of the Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, and the research team of Professor Yuan Qinghong of East China Normal University, based on in-situ synthesis, characterization research and first-principles calculation methods, proposed that the iron-boron (Fe2B) alloy has a high surface A new mechanism for mass multi-layer hexagonal boron nitride (h-BN) atom vacancy assisted growth.

Related research results are titled Vacancy-Assisted Growth Mechanism of Multilayer Hexagonal Boron Nitride on a Fe2B Substrate and published online in "Physical Chemistry Letters".

Hexagonal boron nitride (h-BN) has the advantages of atomic-level flat surface, no dangling bonds, high thermal conductivity and good physical and chemical stability, and has become a potential dielectric substrate and packaging material for two-dimensional crystal devices. In recent years, the Shanghai Institute of Microsystems has focused on two-dimensional crystal theoretical research, device technology, and problems faced by large-scale applications, in the fields of single-layer h-BN single crystal growth, heterostructure construction and high-quality multilayer h-BN preparation Research.

Due to the slow development of advanced synthesis technology of h-BN, the lack of research on the growth mechanism of traditional methods limits the controllable synthesis and practical application of large-size, high-quality h-BN.

Say something
  • All comments(0)
    No comment yet. Please say something!